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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION With TO-220C package High breakdown voltage Large collector power dissipation APPLICATIONS Color TV horizontal deflection driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector-base voltage SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 350 300 7.5 200 400 UNIT V V V mA mA W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 15 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC1905 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=100|I A ; IE=0 350 V V(BR)EBO Emitter-base breakdown voltage IE=100|I A ; IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA 1.0 V ICBO Collector cut-off current VCB=200V ;IE=0 2 |I A IEBO Emitter cut-off current VEB=5V; IC=0 2 |I A hFE DC current gain fT COB Transition frequency ANG CH IC=10m A ; VCE=10V 40 250 IC=10m A ; VCE=30V Output capacitance tstg Storage time IN EMIC ES IE=0 ; VCB=50V; f=1MHz DUC ON 50 5 TOR 4.5 7.5 MHz pF IC=100mA; IB1=10mA; IB2=0 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1905 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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